NXP Semiconductors BLS6G2731S-130

表面安装

YES

终端数量

2

晶体管元件材料

SILICON

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

60

Maximum Gate Source Voltage (V)

13

Maximum VSWR

5

Maximum Continuous Drain Current (A)

33

Maximum Drain Source Resistance (mOhm)

[email protected]

Typical Forward Transconductance (S)

13

Output Power (W)

130(Typ)

Typical Power Gain (dB)

12

Maximum Frequency (MHz)

3100

Minimum Frequency (MHz)

2700

Typical Fall Time (ns)

6

Typical Rise Time (ns)

20

Typical Drain Efficiency (%)

47

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Supplier Package

CDFM

Military

无

Mounting

表面贴装

Package Height

4.22(Max)

Package Length

17.75(Max)

Package Width

9.53(Max)

PCB changed

3

Package Description

FLATPACK, R-CDFP-F2

Package Style

FLATPACK

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Reflow Temperature-Max (s)

30

Operating Temperature-Max

200 °C

Rohs Code

有

Manufacturer Part Number

BLS6G2731S-130

Package Shape

RECTANGULAR

Manufacturer

恩智浦半导体

Number of Elements

1

Part Life Cycle Code

Transferred

Ihs Manufacturer

NXP SEMICONDUCTORS

Risk Rank

5.63

Drain Current-Max (ID)

33 A

零件状态

活跃

ECCN 代码

EAR99

端子位置

DUAL

终端形式

FLAT

峰值回流焊温度（摄氏度）

280

Reach合规守则

unknown

引脚数量

3

JESD-30代码

R-CDFP-F2

资历状况

不合格

配置

Single

操作模式

增强型MOSFET

箱体转运

SOURCE

晶体管应用

AMPLIFIER

极性/通道类型

N-CHANNEL

DS 击穿电压-最小值

60 V

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最高频段

S带

操作方式

脉冲射频

RoHS状态

符合RoHS标准