NXP Semiconductors BLS7G3135LS-200

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

13

Output Power (W)

200(Typ)

Typical Power Gain (dB)

10

Maximum Frequency (MHz)

3500

Minimum Frequency (MHz)

3100

Typical Drain Efficiency (%)

43

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

225

Supplier Package

SOT-502B

Military

无

Mounting

表面贴装

Package Height

4.72(Max)

Package Length

20.7(Max)

Package Width

9.91(Max)

PCB changed

3

Package Description

,

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

BLS7G3135LS-200

Manufacturer

恩智浦半导体

Part Life Cycle Code

Transferred

Ihs Manufacturer

NXP SEMICONDUCTORS

Risk Rank

5.78

零件状态

NRND

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

unknown

引脚数量

3

配置

Single

信道型

N

操作方式

脉冲射频

RoHS状态

符合RoHS标准