NXP Semiconductors BLU6H0410L-600P

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

2

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

110

Maximum Gate Source Voltage (V)

11

Maximum Gate Threshold Voltage (V)

2.4

Maximum VSWR

40(Min)

Maximum Gate Source Leakage Current (nA)

280

Maximum IDSS (uA)

2.8

Maximum Drain Source Resistance (mOhm)

[email protected]

Typical Input Capacitance @ Vds (pF)

220@50V

Typical Reverse Transfer Capacitance @ Vds (pF)

1.2@50V

Typical Output Capacitance @ Vds (pF)

74@50V

Output Power (W)

250(Min)

Typical Power Gain (dB)

21

Maximum Frequency (MHz)

900

Minimum Frequency (MHz)

400

Typical Drain Efficiency (%)

46

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Supplier Package

SOT-539A

Military

无

Mounting

Screw

Package Height

4.7(Max)

Package Length

41.28(Max)

Package Width

10.29(Max)

PCB changed

5

零件状态

活跃

引脚数量

5

配置

双共源

信道型

N

操作方式

Pulsed RF Class-AB

RoHS状态

符合RoHS标准