NXP Semiconductors CLF1G0035-50,112

材料

GaN

ECCN (US)

EAR99

HTS

8541.29.00.75

Channel Mode

Depletion

Number of Elements per Chip

1

Process Technology

HEMT

Maximum Drain Source Voltage (V)

150

Maximum Gate Source Voltage (V)

3

Maximum Gate Threshold Voltage (V)

1.3

Maximum VSWR

10

Typical Forward Transconductance (S)

2

Output Power (W)

50(Typ)

Typical Power Gain (dB)

11.5

Maximum Frequency (MHz)

3500

Minimum Frequency (MHz)

0

Typical Drain Efficiency (%)

54

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

250

Automotive

Unknown

Supplier Package

SOT-467C

Military

无

Mounting

Screw

Package Height

4.67(Max)

Package Length

20.45(Max)

Package Width

5.97(Max)

PCB changed

3

包装

Bulk

零件状态

活跃

类型

JFET

引脚数量

3

配置

Single

信道型

N

操作方式

1-Tone CW

RoHS状态

符合RoHS标准