NXP USA Inc. A3G26D055NT4

包装/外壳

6-LDFN Exposed Pad

供应商器件包装

6-PDFN (7x6.5)

厂商

NXP USA Inc.

Product Status

活跃

Voltage Rated

125 V

Vds - Drain-Source Breakdown Voltage

125 V

Vgs th - Gate-Source Threshold Voltage

- 3.5 V

Transistor Polarity

Dual N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 8 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Part # Aliases

935402445528

Manufacturer

NXP

Brand

恩智浦半导体

RoHS

Details

Id - Continuous Drain Current

3 mA

Rds On - Drain-Source Resistance

-

系列

-

包装

切割胶带

类型

射频功率MOSFET

子类别

MOSFETs

额定电流

-

技术

GaN Si

频率

100MHz ~ 2.69GHz

工作频率

100 MHz to 2690 MHz

通道数量

2 Channel

输出功率

8 W

测试电流

40 mA

产品类别

射频MOSFET晶体管

晶体管类型

GaN

增益

13.9dB

功率 - 输出

8W

噪声图

-

电压-测试

48 V

产品类别

射频MOSFET晶体管