NXP USA Inc. A5G35H055NT4

包装/外壳

DFN-6

Product Status

活跃

Package

Tape & Reel (TR)

厂商

NXP USA Inc.

Vds - Drain-Source Breakdown Voltage

125 V

Moisture Sensitive

有

Vgs th - Gate-Source Threshold Voltage

- 3.5 V

Transistor Polarity

Dual N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 8 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Part # Aliases

935417638528

Manufacturer

NXP

Brand

恩智浦半导体

RoHS

Details

Id - Continuous Drain Current

3.8 mA

Rds On - Drain-Source Resistance

-

系列

*

包装

切割胶带

类型

射频功率MOSFET

子类别

MOSFETs

技术

GaN Si

工作频率

3400 MHz to 3600 MHz

通道数量

2 Channel

输出功率

7.6 W

产品类别

射频MOSFET晶体管

增益

13.5 dB

产品类别

射频MOSFET晶体管