NXP USA Inc. A5G35H110NT4

包装/外壳

6-LDFN Exposed Pad

供应商器件包装

6-PDFN (7x6.5)

厂商

NXP USA Inc.

Package

Tape & Reel (TR)

Product Status

活跃

Voltage Rated

125 V

Vds - Drain-Source Breakdown Voltage

125 V

Transistor Polarity

Dual N-Channel

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Id - Continuous Drain Current

8.7 mA

系列

-

额定电流

-

技术

GaN Si

频率

3.3GHz ~ 3.7GHz

工作频率

3.3 GHz to 3.7 GHz

输出功率

15.1 W

测试电流

70 mA

晶体管类型

-

增益

15.3dB

功率 - 输出

15.1W

噪声图

-

电压-测试

48 V