NXP USA Inc. A5G35S004NT6

包装/外壳

6-LDFN Exposed Pad

供应商器件包装

6-PDFN (4x4.5)

厂商

NXP USA Inc.

Package

Tape & Reel (TR)

Product Status

活跃

Voltage Rated

125 V

Vds - Drain-Source Breakdown Voltage

125 V

Vgs th - Gate-Source Threshold Voltage

- 4.9 V

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 8 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Part # Aliases

935417637528

Manufacturer

NXP

Brand

恩智浦半导体

RoHS

Details

Id - Continuous Drain Current

12 mA

Rds On - Drain-Source Resistance

-

系列

-

包装

切割胶带

类型

射频功率MOSFET

子类别

MOSFETs

额定电流

-

技术

GaN Si

频率

3.3GHz ~ 4.3GHz

工作频率

3300 MHz to 4300 MHz

通道数量

1 Channel

输出功率

24.5 dBm

测试电流

12 mA

产品类别

射频MOSFET晶体管

晶体管类型

-

增益

16.9dB

功率 - 输出

24.5dBm

噪声图

-

电压-测试

48 V

产品类别

射频MOSFET晶体管