NXP USA Inc. A5G35S008NT6

包装/外壳

DFN-6

厂商

NXP USA Inc.

Package

Tape & Reel (TR)

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

125 V

Moisture Sensitive

有

Vgs th - Gate-Source Threshold Voltage

- 4.6 V

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 8 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Part # Aliases

935427147528

Manufacturer

NXP

Brand

恩智浦半导体

RoHS

Details

Rds On - Drain-Source Resistance

-

Id - Continuous Drain Current

1.52 mA

系列

*

包装

切割胶带

类型

射频功率MOSFET

子类别

MOSFETs

技术

GaN Si

工作频率

3300 MHz to 3800 MHz

通道数量

1 Channel

输出功率

27 dBm

产品类别

射频MOSFET晶体管

增益

18.6 dB

产品类别

射频MOSFET晶体管