onsemi NTD600N80S3Z

安装类型

表面贴装

包装/外壳

TO-252-3, DPak (2 Leads + Tab), SC-63

供应商器件包装

D-PAK (TO-252)

Continuous Drain Current Id

8

MSL

MSL 1 - Unlimited

Qualification

-

Number of Elements per Chip

1

Package Type

DPAK (TO-252)

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

8A (Tj)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

onsemi

Power Dissipation (Max)

60W (Tc)

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

800 V

Vgs th - Gate-Source Threshold Voltage

3.8 V

Pd - Power Dissipation

60 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

15.5 nC

Rds On - Drain-Source Resistance

600 mOhms

Id - Continuous Drain Current

8 A

系列

SUPERFET III

操作温度

-55°C ~ 150°C (TJ)

技术

MOSFET (Metal Oxide)

引脚数量

3

通道数量

1 Channel

功率耗散

60

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

600mOhm @ 4A, 10V

不同 Id 时 Vgs(th)（最大值）

3.8V @ 180µA

输入电容(Ciss)(Max)@Vds

725 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

15.5 nC @ 10 V

漏源电压 (Vdss)

800 V

Vgs（最大值）

±20V

信道型

N通道

场效应管特性

-