onsemi NTMFS006N12MCT1G

包装/外壳

SO-8FL-4

安装类型

表面贴装

供应商器件包装

5-DFN (5x6) (8-SOFL)

Vds - Drain-Source Breakdown Voltage

120 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

104 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

42 nC

Rds On - Drain-Source Resistance

6 mOhms

RoHS

Details

Id - Continuous Drain Current

93 A

Number of Elements per Chip

1

Package Type

DFN

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

93A

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

15A (Ta), 93A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

厂商

onsemi

Power Dissipation (Max)

2.7W (Ta), 104W (Tc)

Product Status

活跃

包装

MouseReel

系列

NTMFS006N

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

技术

Si

引脚数量

5

通道数量

1 Channel

功率耗散

104W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

6mOhm @ 46A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 260µA

输入电容(Ciss)(Max)@Vds

3365 pF @ 60 V

门极电荷(Qg)(最大)@Vgs

42 nC @ 10 V

漏源电压 (Vdss)

120 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET