onsemi NTMFS0D5N03CT1G

包装/外壳

SO-8FL

安装类型

表面贴装

供应商器件包装

5-DFN (5x6) (8-SOFL)

Vds - Drain-Source Breakdown Voltage

30 V

Vgs th - Gate-Source Threshold Voltage

2.2 V

Pd - Power Dissipation

200 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

80 nC

Rds On - Drain-Source Resistance

520 uOhms

RoHS

Details

Id - Continuous Drain Current

464 A

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

464A

Number of Elements per Chip

1

Package Type

DFN

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

65A (Ta), 464A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

onsemi

Power Dissipation (Max)

3.9W (Ta), 200W (Tc)

Product Status

活跃

包装

MouseReel

系列

NTMFS0D5N

操作温度

-55°C ~ 175°C (TJ)

子类别

MOSFETs

技术

Si

引脚数量

5

通道数量

1 Channel

功率耗散

200W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

0.52mOhm @ 30A, 10V

不同 Id 时 Vgs(th)（最大值）

2.2V @ 330µA

输入电容(Ciss)(Max)@Vds

13000 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

178 nC @ 10 V

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET