onsemi NTMFSC4D2N10MC

安装类型

表面贴装

包装/外壳

DFN-8

供应商器件包装

8-DFN (5x6.15)

Number of Elements per Chip

1

Package Type

DFN

Channel Mode

Enhancement

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

122 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

42 nC

Rds On - Drain-Source Resistance

4.3 mOhms

RoHS

Details

Id - Continuous Drain Current

116 A

MSL

-

Qualification

-

Continuous Drain Current Id

116A

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

NTMFSC4

Current - Continuous Drain (Id) @ 25℃

29.6A (Ta), 116A (Tc)

厂商

onsemi

Power Dissipation (Max)

7.9W (Ta), 122W (Tc)

Product Status

活跃

系列

NTMFS

操作温度

-55°C ~ 175°C (TJ)

子类别

MOSFETs

技术

Si

引脚数量

8

通道数量

1 Channel

功率耗散

122W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

4.3mOhm @ 44A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 250µA

输入电容(Ciss)(Max)@Vds

2856 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

42 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET