onsemi NTMTSC4D3N15MC

安装类型

表面贴装

包装/外壳

8-PowerTDFN

供应商器件包装

8-TDFNW (8.3x8.4)

Number of Elements per Chip

1

Package Type

TDFNW8

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

174A

Vds - Drain-Source Breakdown Voltage

150 V

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

293 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

79 nC

Rds On - Drain-Source Resistance

4.45 mOhms

RoHS

Details

Id - Continuous Drain Current

174 A

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

22A (Ta), 174A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

8V, 10V

厂商

onsemi

Power Dissipation (Max)

5W (Ta), 293W (Tc)

Product Status

活跃

操作温度

-55°C ~ 175°C (TJ)

系列

Dual Cool™

子类别

MOSFETs

技术

Si

引脚数量

8

通道数量

1 Channel

功率耗散

293W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

4.45mOhm @ 95A, 10V

不同 Id 时 Vgs(th)（最大值）

4.5V @ 521µA

输入电容(Ciss)(Max)@Vds

6514 pF @ 75 V

门极电荷(Qg)(最大)@Vgs

79 nC @ 10 V

漏源电压 (Vdss)

150 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET