onsemi NVBG160N120SC1

包装/外壳

D2PAK-7

安装类型

表面贴装

供应商器件包装

D2PAK-7

Continuous Drain Current Id

19.5

MSL

MSL 3 - 168 hours

Vds - Drain-Source Breakdown Voltage

1.2 kV

Vgs th - Gate-Source Threshold Voltage

4.3 V

Qualification

AEC-Q101

Pd - Power Dissipation

136 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 15 V, + 25 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

800

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

33.8 nC

Rds On - Drain-Source Resistance

224 mOhms

RoHS

Details

Id - Continuous Drain Current

19.5 A

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

NVBG160

Current - Continuous Drain (Id) @ 25℃

19.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

厂商

onsemi

Power Dissipation (Max)

136W (Tc)

Product Status

活跃

包装

切割胶带

操作温度

-55°C ~ 175°C (TJ)

系列

Automotive, AEC-Q101

子类别

MOSFETs

技术

SiC

通道数量

1 Channel

功率耗散

136

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

224mOhm @ 12A, 20V

不同 Id 时 Vgs(th)（最大值）

4.3V @ 2.5mA

输入电容(Ciss)(Max)@Vds

678 pF @ 800 V

门极电荷(Qg)(最大)@Vgs

33.8 nC @ 20 V

漏源电压 (Vdss)

1200 V

Vgs（最大值）

+25V, -15V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET