ON Semiconductor 2SK3850-E

材料

Si

EU RoHS

供应商未确认

ECCN (US)

EAR99

HTS

8541.21.00.95

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

600

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

3.5

Maximum Continuous Drain Current (A)

0.7

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

100

Maximum Drain Source Resistance (mOhm)

18500@10V

Typical Gate Charge @ Vgs (nC)

4@10V

Typical Gate Charge @ 10V (nC)

4

Typical Input Capacitance @ Vds (pF)

96@20V

Maximum Power Dissipation (mW)

1000

Typical Fall Time (ns)

50

Typical Rise Time (ns)

11

Typical Turn-Off Delay Time (ns)

16

Typical Turn-On Delay Time (ns)

9

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

零件状态

Obsolete

配置

单排双泄

信道型

N