ON Semiconductor FDB66N15TM

表面安装

YES

终端数量

2

晶体管元件材料

SILICON

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8542.31.00.01

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

150

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

66

Maximum Drain Source Resistance (MOhm)

36@10V

Typical Gate Charge @ Vgs (nC)

49@10V

Typical Gate Charge @ 10V (nC)

49

Typical Input Capacitance @ Vds (pF)

2200@25V

Maximum Power Dissipation (mW)

357000

Typical Fall Time (ns)

180

Typical Rise Time (ns)

480

Typical Turn-Off Delay Time (ns)

65

Typical Turn-On Delay Time (ns)

40

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

4.83(Max)

Package Width

9.65(Max)

Package Length

10.67(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-263

Supplier Package

D2PAK

Lead Shape

Gull-wing

Package Description

LEAD FREE, D2PAK-3

Package Style

小概要

Moisture Sensitivity Levels

1

Package Body Material

PLASTIC/EPOXY

Rohs Code

有

Manufacturer Part Number

FDB66N15TM

Package Shape

RECTANGULAR

Manufacturer

Fairchild Semiconductor Corporation

Number of Elements

1

Part Life Cycle Code

Obsolete

Ihs Manufacturer

FAIRCHILD SEMICONDUCTOR CORP

Risk Rank

5.39

Part Package Code

TO-263

Drain Current-Max (ID)

66 A

包装

卷带

JESD-609代码

e3

零件状态

Obsolete

ECCN 代码

EAR99

端子表面处理

Matte Tin (Sn)

端子位置

SINGLE

终端形式

鸥翼

Reach合规守则

not_compliant

引脚数量

3

JESD-30代码

R-PSSO-G2

资历状况

不合格

配置

Single

操作模式

增强型MOSFET

箱体转运

DRAIN

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

JEDEC-95代码

TO-263

漏极-源极导通最大电阻

0.036 Ω

脉冲漏极电流-最大值(IDM)

264 A

DS 击穿电压-最小值

150 V

信道型

N

雪崩能量等级（Eas）

1240 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR