ON Semiconductor FDS6990S

表面安装

YES

终端数量

8

晶体管元件材料

SILICON

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

2

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

7.5

Maximum Drain Source Resistance (MOhm)

22@10V

Typical Gate Charge @ Vgs (nC)

11@5V

Typical Input Capacitance @ Vds (pF)

1233@15V

Maximum Power Dissipation (mW)

2000

Typical Fall Time (ns)

11

Typical Rise Time (ns)

5

Typical Turn-Off Delay Time (ns)

25

Typical Turn-On Delay Time (ns)

8

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1.65(Max)

Package Width

3.9

Package Length

4.9

PCB changed

8

Standard Package Name

SOP

Supplier Package

SOIC N

Lead Shape

Gull-wing

Package Description

SO-8

Package Style

小概要

Moisture Sensitivity Levels

1

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

FDS6990S

Package Shape

RECTANGULAR

Manufacturer

Rochester Electronics LLC

Number of Elements

2

Part Life Cycle Code

活跃

Ihs Manufacturer

ROCHESTER ELECTRONICS LLC

Risk Rank

5.34

Part Package Code

SOT

Drain Current-Max (ID)

7.5 A

包装

卷带

JESD-609代码

e3

无铅代码

有

零件状态

Obsolete

端子表面处理

哑光锡

端子位置

DUAL

终端形式

鸥翼

峰值回流焊温度（摄氏度）

260

Reach合规守则

unknown

引脚数量

8

JESD-30代码

R-PDSO-G8

资历状况

COMMERCIAL

配置

双排双泄

操作模式

增强型MOSFET

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

漏极-源极导通最大电阻

0.022 Ω

脉冲漏极电流-最大值(IDM)

20 A

DS 击穿电压-最小值

30 V

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR