ON Semiconductor FDV302P-NL

表面安装

YES

终端数量

3

晶体管元件材料

SILICON

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

DMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

25

Maximum Gate Source Voltage (V)

8

Operating Junction Temperature (°C)

-55 to 150

Maximum Continuous Drain Current (A)

0.12

Maximum Drain Source Resistance (mOhm)

[email protected]

Typical Gate Charge @ Vgs (nC)

[email protected]

Typical Input Capacitance @ Vds (pF)

11@10V

Maximum Power Dissipation (mW)

350

Typical Fall Time (ns)

5

Typical Rise Time (ns)

8

Typical Turn-Off Delay Time (ns)

9

Typical Turn-On Delay Time (ns)

5

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

0.93

Package Width

1.3

Package Length

2.92

PCB changed

3

Standard Package Name

SOT

Supplier Package

SOT-23

Lead Shape

Gull-wing

Package Style

小概要

Moisture Sensitivity Levels

1

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

150 °C

Rohs Code

有

Manufacturer Part Number

FDV302P_NL

Package Shape

RECTANGULAR

Manufacturer

Fairchild Semiconductor Corporation

Number of Elements

1

Part Life Cycle Code

Obsolete

Ihs Manufacturer

FAIRCHILD SEMICONDUCTOR CORP

Risk Rank

5.47

Drain Current-Max (ID)

0.12 A

包装

卷带

JESD-609代码

e3

零件状态

Obsolete

ECCN 代码

EAR99

端子表面处理

Matte Tin (Sn)

附加功能

逻辑电平兼容

HTS代码

8541.21.00.95

子类别

其他晶体管

端子位置

DUAL

终端形式

鸥翼

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

not_compliant

引脚数量

3

JESD-30代码

R-PDSO-G3

资历状况

不合格

配置

Single

操作模式

增强型MOSFET

晶体管应用

SWITCHING

极性/通道类型

P-CHANNEL

最大漏极电流 (Abs) (ID)

0.12 A

漏极-源极导通最大电阻

10 Ω

DS 击穿电压-最小值

25 V

信道型

P

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

0.35 W