ON Semiconductor HUF76129P3

材料

Si

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

56

Maximum Drain Source Resistance (mOhm)

16@10V

Typical Gate Charge @ Vgs (nC)

37@10V

Typical Gate Charge @ 10V (nC)

37

Typical Input Capacitance @ Vds (pF)

1350@25V

Maximum Power Dissipation (mW)

105000

Typical Fall Time (ns)

32|35

Typical Rise Time (ns)

90|30

Typical Turn-Off Delay Time (ns)

28|68

Typical Turn-On Delay Time (ns)

11|14

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

9.02(Max)

Package Width

4.57(Max)

Package Length

10.28(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-220

Supplier Package

TO-220AB

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

N