ON Semiconductor IRFR120ATF

表面安装

YES

终端数量

2

晶体管元件材料

SILICON

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

8.4

Maximum Drain Source Resistance (MOhm)

200@10V

Typical Gate Charge @ Vgs (nC)

16@10V

Typical Gate Charge @ 10V (nC)

16

Typical Input Capacitance @ Vds (pF)

370@25V

Maximum Power Dissipation (mW)

2500

Typical Fall Time (ns)

28

Typical Rise Time (ns)

14

Typical Turn-Off Delay Time (ns)

36

Typical Turn-On Delay Time (ns)

14

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

2.3

Package Width

6.1

Package Length

6.6

PCB changed

2

Tab

Tab

Standard Package Name

TO-252

Supplier Package

DPAK

Package Description

DPAK-3

Package Style

小概要

Moisture Sensitivity Levels

1

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

IRFR120ATF

Package Shape

RECTANGULAR

Manufacturer

Rochester Electronics LLC

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

ROCHESTER ELECTRONICS LLC

Risk Rank

5.12

Part Package Code

TO-252

Drain Current-Max (ID)

8.4 A

包装

卷带

JESD-609代码

e3

无铅代码

有

零件状态

Obsolete

端子表面处理

哑光锡

端子位置

SINGLE

终端形式

鸥翼

峰值回流焊温度（摄氏度）

260

Reach合规守则

unknown

引脚数量

3

JESD-30代码

R-PSSO-G2

资历状况

COMMERCIAL

配置

Single

操作模式

增强型MOSFET

箱体转运

DRAIN

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

JEDEC-95代码

TO-252

漏极-源极导通最大电阻

0.2 Ω

脉冲漏极电流-最大值(IDM)

34 A

DS 击穿电压-最小值

100 V

信道型

N

雪崩能量等级（Eas）

141 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR