ON Semiconductor MTD2955ET4

材料

Si

EU RoHS

不合规

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

60

Maximum Gate Source Voltage (V)

±15

Maximum Continuous Drain Current (A)

12

Maximum Drain Source Resistance (MOhm)

300@10V

Typical Gate Charge @ Vgs (nC)

16@10V

Typical Gate Charge @ 10V (nC)

16

Typical Input Capacitance @ Vds (pF)

565@25V

Maximum Power Dissipation (mW)

1750

Typical Fall Time (ns)

8

Typical Rise Time (ns)

39

Typical Turn-Off Delay Time (ns)

17

Typical Turn-On Delay Time (ns)

9

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

2.38(Max)

Package Width

6.35(Max)

Package Length

6.73(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-252

Supplier Package

DPAK

Lead Shape

Gull-wing

包装

卷带

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

P