ON Semiconductor MTP1N100E

表面安装

NO

材料

Si

终端数量

3

晶体管元件材料

SILICON

EU RoHS

不合规

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

TMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1000

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Operating Junction Temperature (°C)

-55 to 150

Maximum Continuous Drain Current (A)

1

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

10

Maximum Drain Source Resistance (MOhm)

9000@10V

Typical Gate Charge @ Vgs (nC)

14.6@10V

Typical Gate Charge @ 10V (nC)

14.6

Typical Reverse Recovery Charge (nC)

957

Typical Input Capacitance @ Vds (pF)

587@25V

Typical Reverse Transfer Capacitance @ Vds (pF)

12.2@25V

Minimum Gate Threshold Voltage (V)

2

Typical Output Capacitance (pF)

59

Maximum Power Dissipation (mW)

75000

Typical Fall Time (ns)

34

Typical Rise Time (ns)

12

Typical Turn-Off Delay Time (ns)

28

Typical Turn-On Delay Time (ns)

9

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Maximum Pulsed Drain Current @ TC=25°C (A)

3

Typical Diode Forward Voltage (V)

0.764

Typical Gate Plateau Voltage (V)

5.2

Typical Reverse Recovery Time (ns)

655

Maximum Diode Forward Voltage (V)

1

Typical Gate Threshold Voltage (V)

3

Maximum Positive Gate Source Voltage (V)

20

Mounting

通孔

Package Height

9.28(Max)

Package Width

4.82(Max)

Package Length

10.28(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-220

Supplier Package

TO-220AB

Lead Shape

通孔

Package Style

FLANGE MOUNT

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

150 °C

Rohs Code

无

Manufacturer Part Number

MTP1N100E

Package Shape

RECTANGULAR

Manufacturer

安森美半导体

Number of Elements

1

Part Life Cycle Code

Obsolete

Ihs Manufacturer

ON SEMICONDUCTOR

Risk Rank

8.14

Drain Current-Max (ID)

1 A

JESD-609代码

e0

零件状态

Obsolete

ECCN 代码

EAR99

端子表面处理

Tin/Lead (Sn/Pb)

附加功能

雪崩 额定

子类别

FET 通用电源

端子位置

SINGLE

终端形式

THROUGH-HOLE

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

not_compliant

引脚数量

3

JESD-30代码

R-PSFM-T3

资历状况

不合格

配置

Single

操作模式

增强型MOSFET

箱体转运

DRAIN

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

JEDEC-95代码

TO-220AB

最大漏极电流 (Abs) (ID)

1 A

漏极-源极导通最大电阻

9 Ω

脉冲漏极电流-最大值(IDM)

3 A

DS 击穿电压-最小值

1000 V

信道型

N

雪崩能量等级（Eas）

45 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

75 W