ON Semiconductor MTP3055EL

EU RoHS

供应商未确认

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

TMOS IV

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

60

Maximum Gate Source Voltage (V)

±15

Maximum Gate Threshold Voltage (V)

2

Maximum Continuous Drain Current (A)

12

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

180@5V

Typical Gate Charge @ Vgs (nC)

7.2@5V

Typical Input Capacitance @ Vds (pF)

400@25V|1000@0V

Maximum Power Dissipation (mW)

40000

Typical Fall Time (ns)

50

Typical Rise Time (ns)

95

Typical Turn-Off Delay Time (ns)

38

Typical Turn-On Delay Time (ns)

20

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

150

Mounting

通孔

PCB changed

3

Tab

Tab

Standard Package Name

TO-220

Supplier Package

TO-220AB

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

N