ON Semiconductor MTW45N10E

EU RoHS

不合规

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

45

Maximum Drain Source Resistance (MOhm)

35@10V

Typical Gate Charge @ Vgs (nC)

106@10V

Typical Gate Charge @ 10V (nC)

106

Typical Input Capacitance @ Vds (pF)

3480@25V

Maximum Power Dissipation (mW)

180000

Typical Fall Time (ns)

116

Typical Rise Time (ns)

234

Typical Turn-Off Delay Time (ns)

83

Typical Turn-On Delay Time (ns)

25

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

20.9

Package Width

5.21

Package Length

15.95

PCB changed

3

Tab

Tab

Standard Package Name

TO-247

Supplier Package

TO-247

Lead Shape

通孔

包装

Rail

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

N