ON Semiconductor NTMFS4921NBT1G

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

2.5

Maximum Continuous Drain Current (A)

13.8

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

[email protected]

Typical Gate Charge @ Vgs (nC)

[email protected]|[email protected]

Typical Input Capacitance @ Vds (pF)

1400@12V

Maximum Power Dissipation (mW)

5610

Typical Fall Time (ns)

3.8|3.1

Typical Rise Time (ns)

38|20

Typical Turn-Off Delay Time (ns)

23|16.6

Typical Turn-On Delay Time (ns)

13.3|8.2

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1.05(Max)

Package Width

5.9

Package Length

4.9

PCB changed

4

Tab

Tab

Standard Package Name

SO

Supplier Package

SO-FL

Lead Shape

Flat

Package Description

,

Moisture Sensitivity Levels

1

Rohs Code

有

Manufacturer Part Number

NTMFS4921NBT1G

Manufacturer

安森美半导体

Part Life Cycle Code

Obsolete

Ihs Manufacturer

ON SEMICONDUCTOR

Risk Rank

8.06

JESD-609代码

e3

零件状态

Obsolete

端子表面处理

Tin (Sn)

Reach合规守则

not_compliant

引脚数量

5

配置

单四漏三源

信道型

N