Qorvo QPD1008L

包装/外壳

NI-360

Vgs th - Gate-Source Threshold Voltage

- 2.8 V

Factory Pack QuantityFactory Pack Quantity

25

Moisture Sensitive

有

Development Kit

QPD1008LPCB401

Mounting Styles

螺钉安装

Pd - Power Dissipation

127 W

Maximum Operating Temperature

+ 85 C

Minimum Operating Temperature

- 40 C

Id - Continuous Drain Current

4 A

Vgs - Gate-Source Breakdown Voltage

145 V

Vds - Drain-Source Breakdown Voltage

50 V

Transistor Polarity

N-Channel

RoHS

Details

系列

QPD1008L

包装

Tray

工作频率

3.2 GHz

配置

Single

输出功率

162 W

晶体管类型

HEMT

工作温度范围

- 40 C to + 85 C

增益

17.5 dB