Qorvo TGF2978-SM

包装/外壳

QFN-20

Unit Weight

0.004339 oz

Shipping Restrictions

This product may require additional documentation to export from the United States.

RoHS

Details

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

32 V

Vgs - Gate-Source Breakdown Voltage

- 2.7 V

Id - Continuous Drain Current

1.3 A

Maximum Operating Temperature

+ 225 C

Pd - Power Dissipation

33 W

Mounting Styles

SMD/SMT

Development Kit

TGF2978-SMEVB1

Moisture Sensitive

有

Factory Pack QuantityFactory Pack Quantity

50

Part # Aliases

TGF2978 1127373

包装

Tray

系列

TGF2978

类型

GaN SiC HEMT

工作频率

DC to 12 GHz

配置

Single

通道数量

1 Channel

输出功率

19 W

晶体管类型

HEMT

增益

11 dB

高度

0.203 mm

长度

4 mm

宽度

3 mm