Qorvo TGF2819-FS

包装/外壳

NI-360

Shipping Restrictions

This product may require additional documentation to export from the United States.

RoHS

Details

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

32 V

Vgs - Gate-Source Breakdown Voltage

- 2.9 V

Id - Continuous Drain Current

7.32 A

Maximum Drain Gate Voltage

145 V

Minimum Operating Temperature

- 40 C

Maximum Operating Temperature

+ 85 C

Pd - Power Dissipation

86 W

Mounting Styles

SMD/SMT

Part # Aliases

1118705 1118705

Development Kit

TGF2819-FS/FL, EVAL BOARD

Moisture Sensitive

有

Factory Pack QuantityFactory Pack Quantity

25

包装

Tray

系列

TGF2819

类型

GaN SiC HEMT

工作频率

3.5 GHz

配置

Single

输出功率

100 W

晶体管类型

HEMT

工作温度范围

- 40 C to + 85 C

增益

14 dB