Qorvo TGF2979-SM

包装/外壳

QFN-20

Shipping Restrictions

This product may require additional documentation to export from the United States.

RoHS

Details

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

32 V

Vgs - Gate-Source Breakdown Voltage

- 2.7 V

Id - Continuous Drain Current

1.8 A

Maximum Operating Temperature

+ 225 C

Pd - Power Dissipation

49 W

Mounting Styles

SMD/SMT

Development Kit

TGF2979-SMEVB1

Moisture Sensitive

有

Factory Pack QuantityFactory Pack Quantity

50

Part # Aliases

TGF2979 1127378

Unit Weight

0.004339 oz

包装

Tray

系列

TGF2979

类型

GaN SiC HEMT

工作频率

DC to 12 GHz

配置

Single

通道数量

1 Channel

输出功率

22 W

晶体管类型

HEMT

增益

11 dB

产品

射频JFET晶体管

高度

0.203 mm

长度

4 mm

宽度

3 mm