Qorvo QPD1016

包装/外壳

NI780-2

RoHS

Details

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

145 V

Vgs - Gate-Source Breakdown Voltage

- 7 V to 1.5 V

Id - Continuous Drain Current

70 A

Maximum Drain Gate Voltage

55 V

Minimum Operating Temperature

- 40 C

Maximum Operating Temperature

+ 85 C

Pd - Power Dissipation

714 W

Mounting Styles

SMD/SMT

Development Kit

QPD1016EVB01

Moisture Sensitive

有

Factory Pack QuantityFactory Pack Quantity

25

系列

QPD1016

工作频率

DC to 1.7 GHz

配置

Single

输出功率

680 W

晶体管类型

HEMT

增益

23.9 dB