Qorvo QPD1881L

包装/外壳

NI780-2

RoHS

Details

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

145 V

Vgs - Gate-Source Breakdown Voltage

- 7 V to 2 V

Id - Continuous Drain Current

13 A

Maximum Drain Gate Voltage

55 V

Minimum Operating Temperature

- 40 C

Maximum Operating Temperature

+ 85 C

Pd - Power Dissipation

237 W

Mounting Styles

SMD/SMT

Development Kit

QPD1881LEVB01

Moisture Sensitive

有

Factory Pack QuantityFactory Pack Quantity

25

系列

QPD1881L

工作频率

2.7 GHz to 2.9 GHz

配置

Single

晶体管类型

HEMT

增益

21.2 dB