Qorvo QPD2793

包装/外壳

NI400-2

RoHS

Details

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

-

Vgs - Gate-Source Breakdown Voltage

-

Id - Continuous Drain Current

-

Maximum Drain Gate Voltage

-

Minimum Operating Temperature

- 40 C

Pd - Power Dissipation

-

Mounting Styles

SMD/SMT

Forward Transconductance - Min

-

Factory Pack QuantityFactory Pack Quantity

25

Part # Aliases

1130771 1130771

包装

Tray

系列

QPD2793

应用

Microcell Base Station, W-CDMA / LTE

工作频率

2.62 GHz to 2.69 GHz

配置

Single

输出功率

200 W

晶体管类型

HEMT

增益

19 dB