Qorvo T2G6000528-Q3

包装/外壳

NI-200

RoHS

Details

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

-

Vgs - Gate-Source Breakdown Voltage

-

Id - Continuous Drain Current

650 mA

Maximum Drain Gate Voltage

-

Pd - Power Dissipation

12.5 W

Mounting Styles

SMD/SMT

Development Kit

T2G6000528-Q3-EVB1, T2G6000528-Q3-EVB3, T2G6000528-Q3-EVB5

Forward Transconductance - Min

-

Moisture Sensitive

有

Factory Pack QuantityFactory Pack Quantity

100

Part # Aliases

T2G6000528 1099997

Unit Weight

0.260886 oz

包装

Tray

系列

T2G6000528

应用

Military Radar, Professional and Military Radio Communications

工作频率

DC to 6 GHz

配置

Single

输出功率

10 W

晶体管类型

HEMT

增益

15 dB