Qorvo TGF2933

包装/外壳

DIE

RoHS

Details

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

-

Vgs - Gate-Source Breakdown Voltage

-

Id - Continuous Drain Current

80 mA

Maximum Drain Gate Voltage

-

Minimum Operating Temperature

- 40 C

Maximum Operating Temperature

+ 85 C

Pd - Power Dissipation

8.9 W

Mounting Styles

SMD/SMT

Forward Transconductance - Min

-

NF - Noise Figure

1.3 dB

Factory Pack QuantityFactory Pack Quantity

50

Part # Aliases

1113799 1113799

包装

凝胶包

系列

TGF2933

应用

Defense and Aerospace, Broadband Wireless

工作频率

DC to 25 GHz

配置

Single

输出功率

7.2 W

晶体管类型

HEMT

增益

15 dB