STMicroelectronics SCT055HU65G3AG

安装类型

表面贴装

包装/外壳

TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

供应商器件包装

HU3PAK

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

SCT055

Current - Continuous Drain (Id) @ 25℃

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V, 18V

厂商

STMicroelectronics

Power Dissipation (Max)

185W (Tc)

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

4.2 V

Pd - Power Dissipation

185 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Id - Continuous Drain Current

30 A

Rds On - Drain-Source Resistance

72 mOhms

Qg - Gate Charge

29 nC

Channel Mode

Enhancement

Mounting Styles

SMD/SMT

Minimum Operating Temperature

- 55 C

Vgs - Gate-Source Voltage

- 10 V, + 22 V

操作温度

-55°C ~ 175°C (TJ)

系列

Automotive, AEC-Q101

技术

SiCFET (Silicon Carbide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

72mOhm @ 15A, 18V

不同 Id 时 Vgs(th)（最大值）

4.2V @ 1mA

输入电容(Ciss)(Max)@Vds

721 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

29 nC @ 18 V

漏源电压 (Vdss)

650 V

Vgs（最大值）

+22V, -10V

场效应管特性

-