STMicroelectronics SCT1000N170

安装类型

通孔

包装/外壳

HiP-247-3

供应商器件包装

HiP247™

房屋材料

Glass Filled Polyamide

Manufacturer Part Number

831612B3.FC

Approvals

NF;UL;cUL

Manufacturer

Crouzet

Continuous Drain Current Id

7

Number of Elements per Chip

1

Package Type

HiP247

Channel Mode

Enhancement

Vds - Drain-Source Breakdown Voltage

1.7 kV

Vgs th - Gate-Source Threshold Voltage

2.1 V

Pd - Power Dissipation

120 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 200 C

Vgs - Gate-Source Voltage

- 10 V, + 25 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

600

Mounting Styles

通孔

Brand

STMicroelectronics

Qg - Gate Charge

14 nC

Rds On - Drain-Source Resistance

1 Ohms

RoHS

Details

Id - Continuous Drain Current

6 A

Package

Tube

Base Product Number

SCT1000

Current - Continuous Drain (Id) @ 25℃

7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

厂商

STMicroelectronics

Power Dissipation (Max)

96W (Tc)

Product Status

活跃

系列

SCT1000N170

包装

Tube

操作温度

-55°C ~ 200°C (TJ)

子类别

MOSFETs

技术

Si

引脚数量

3

执行器类型

扁平杠杆

配置

Single

通道数量

1 Channel

功率耗散

96

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.3Ohm @ 3A, 20V

不同 Id 时 Vgs(th)（最大值）

3.5V @ 1mA

输入电容(Ciss)(Max)@Vds

133 pF @ 1000 V

门极电荷(Qg)(最大)@Vgs

13.3 nC @ 20 V

漏源电压 (Vdss)

1700 V

Vgs（最大值）

+22V, -10V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-

连接类型

Quick Connect Terminals

产品类别

MOSFET

触点

FORM B (SPNC)