STMicroelectronics SCTH35N65G2V-7AG

安装类型

表面贴装

包装/外壳

H2PAK-7

供应商器件包装

H2PAK-7

Number of Elements per Chip

2

Package Type

H2PAK-7

Channel Mode

Enhancement

MSL

MSL 1 - Unlimited

Continuous Drain Current Id

45A

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

16 ns

Vgs th - Gate-Source Threshold Voltage

5 V

Qualification

AEC-Q101

Pd - Power Dissipation

208 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 10 V, + 22 V

Unit Weight

0.051147 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

SMD/SMT

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

Qg - Gate Charge

73 nC

Rds On - Drain-Source Resistance

67 mOhms

RoHS

Details

Typical Turn-Off Delay Time

35 ns

Id - Continuous Drain Current

45 A

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

SCTH35

Current - Continuous Drain (Id) @ 25℃

45A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V, 20V

厂商

STMicroelectronics

Power Dissipation (Max)

208W (Tc)

Product Status

活跃

包装

MouseReel

操作温度

-55°C ~ 175°C (TJ)

系列

Automotive, AEC-Q101

子类别

MOSFETs

技术

SiC

引脚数量

7

配置

Single

通道数量

1 Channel

功率耗散

208W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

67mOhm @ 20A, 20V

不同 Id 时 Vgs(th)（最大值）

3.2V @ 1mA

输入电容(Ciss)(Max)@Vds

1370 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

73 nC @ 20 V

上升时间

9 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

+22V, -10V

产品类别

MOSFET

晶体管类型

1 N - Channel

信道型

N

场效应管特性

-

产品类别

MOSFET