STMicroelectronics SCTH40N120G2V-7

安装类型

表面贴装

包装/外壳

H2PAK-7

供应商器件包装

H2PAK-7

MSL

MSL 1 - Unlimited

Continuous Drain Current Id

36A

Number of Elements per Chip

1

Package Type

H2PAK-7

Vds - Drain-Source Breakdown Voltage

1.2 kV

Typical Turn-On Delay Time

11 ns

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

250 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 10 V, + 22 V

Unit Weight

0.051147 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

Qg - Gate Charge

63 nC

Rds On - Drain-Source Resistance

75 mOhms

RoHS

Details

Typical Turn-Off Delay Time

18 ns

Id - Continuous Drain Current

33 A

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

SCTH40

Current - Continuous Drain (Id) @ 25℃

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V

厂商

STMicroelectronics

Power Dissipation (Max)

238W (Tc)

Product Status

活跃

系列

SCTH40N

包装

MouseReel

操作温度

-55°C ~ 175°C (TJ)

子类别

MOSFETs

技术

SiC

引脚数量

7

配置

Single

通道数量

1 Channel

功率耗散

238W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

100mOhm @ 20A, 18V

不同 Id 时 Vgs(th)（最大值）

4.9V @ 1mA

输入电容(Ciss)(Max)@Vds

1233 pF @ 800 V

门极电荷(Qg)(最大)@Vgs

61 nC @ 18 V

上升时间

5 ns

漏源电压 (Vdss)

1200 V

Vgs（最大值）

+22V, -10V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-

产品类别

MOSFET