STMicroelectronics SCTL35N65G2V

安装类型

表面贴装

包装/外壳

8-PowerVDFN

引脚数

5

厂商

STMicroelectronics

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

40A (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

5V @ 1mA

Power Dissipation (Max)

417W (Tc)

Base Product Number

SCTL35

Continuous Drain Current Id

40

Number of Elements per Chip

1

Package Type

PowerFLAT 8 x 8 HV

Channel Mode

Enhancement

MSL

MSL 3 - 168 hours

Vds - Drain-Source Breakdown Voltage

650 V

Moisture Sensitive

有

Typical Turn-On Delay Time

16 ns

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

417 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 10 V, + 22 V

Unit Weight

0.006349 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

Qg - Gate Charge

73 nC

Rds On - Drain-Source Resistance

67 mOhms

RoHS

Details

Typical Turn-Off Delay Time

35 ns

Id - Continuous Drain Current

40 A

系列

-

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

417

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

67mOhm @ 20A, 20V

输入电容(Ciss)(Max)@Vds

1370 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

73 nC @ 20 V

上升时间

ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

+22V, -10V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-

产品类别

MOSFET