STMicroelectronics SCTW60N120G2

包装/外壳

HiP247-3

安装类型

通孔

供应商器件包装

HiP247™

RoHS

Details

Mounting Styles

通孔

Vds - Drain-Source Breakdown Voltage

1.2 kV

Id - Continuous Drain Current

60 A

Rds On - Drain-Source Resistance

52 mOhms

Vgs th - Gate-Source Threshold Voltage

5 V

Qg - Gate Charge

94 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 200 C

Pd - Power Dissipation

389 W

Channel Mode

Enhancement

Fall Time

14 ns

Factory Pack QuantityFactory Pack Quantity

600

Typical Turn-Off Delay Time

32 ns

Typical Turn-On Delay Time

16 ns

Continuous Drain Current Id

60

Package

Bulk

Base Product Number

SCTW60

Current - Continuous Drain (Id) @ 25℃

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V

厂商

STMicroelectronics

Power Dissipation (Max)

389W (Tc)

Product Status

活跃

Package Type

HiP247

包装

Tube

操作温度

-55°C ~ 200°C (TJ)

系列

-

引脚数量

3

配置

Single

通道数量

1 Channel

功率耗散

389

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

52mOhm @ 30A, 18V

不同 Id 时 Vgs(th)（最大值）

5V @ 1mA

输入电容(Ciss)(Max)@Vds

1969 pF @ 800 V

门极电荷(Qg)(最大)@Vgs

94 nC @ 8 V

上升时间

16 ns

漏源电压 (Vdss)

1200 V

Vgs（最大值）

+18V, -5V

信道型

N

场效应管特性

-