STMicroelectronics STD18N65M2-EP

安装类型

表面贴装

包装/外壳

TO-252-3, DPak (2 Leads + Tab), SC-63

供应商器件包装

D-PAK (TO-252)

Number of free ISA-slots

0

Supporting protocol for ASI

无

With floppy disc drive

无

Supporting protocol for Data-Highway

无

Supporting protocol for SERCOS

无

Number of HW-interfaces serial TTY

0

Number of HW-interfaces Wireless

0

Supporting protocol for INTERBUS-Safety

无

Radio standard Wi-Fi 802.11

无

Supporting protocol for DeviceNet

无

Supporting protocol for INTERBUS

无

Supporting protocol for LON

无

Number of free PCMCIA-slots

0

Supporting protocol for DeviceNet Safety

无

Supporting protocol for PROFINET CBA

无

Number of free AGP-slots

0

Supporting protocol for PROFIsafe

无

Suitable for safety functions

无

Supporting protocol for KNX

无

Supporting protocol for SafetyBUS p

无

Supporting protocol for CAN

无

Radio standard UMTS

无

Front built-in possible

无

Radio standard GSM

无

Supporting protocol for MODBUS

无

Supporting protocol for Foundation Fieldbus

无

Supporting protocol for SUCONET

无

Supporting protocol for AS-Interface Safety at Work

无

Max. main memory

32000000000

Radio standard Bluetooth

无

IO link master

无

Radio standard GPRS

无

Package

Tape & Reel (TR)

Current - Continuous Drain (Id) @ 25℃

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

STMicroelectronics

Power Dissipation (Max)

110W (Tc)

Product Status

Obsolete

操作温度

-55°C ~ 150°C (TJ)

系列

-

技术

MOSFET (Metal Oxide)

深度

0.444

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

375mOhm @ 5.5A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 250µA

输入电容(Ciss)(Max)@Vds

700 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

14.4 nC @ 10 V

漏源电压 (Vdss)

650 V

Vgs（最大值）

±25V

场效应管特性

-

宽度

0.43

高度

0.088