STMicroelectronics STH10N80K5-2AG

安装类型

表面贴装

包装/外壳

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

供应商器件包装

H2Pak-2

厂商

STMicroelectronics

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

121W (Tc)

Base Product Number

STH10

Continuous Drain Current Id

8

MSL

MSL 1 - Unlimited

Qualification

AEC-Q101

Vds - Drain-Source Breakdown Voltage

800 V

Typical Turn-On Delay Time

14 ns

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

121 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.139332 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

Qg - Gate Charge

17.3 nC

Tradename

MDmesh

Rds On - Drain-Source Resistance

680 mOhms

RoHS

Details

Typical Turn-Off Delay Time

34 ns

Id - Continuous Drain Current

8 A

系列

Automotive, AEC-Q101

操作温度

-55°C ~ 150°C (TJ)

包装

MouseReel

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

121

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

680mOhm @ 4A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 100μA

输入电容(Ciss)(Max)@Vds

426 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

17.3 nC @ 10 V

上升时间

11 ns

漏源电压 (Vdss)

800 V

Vgs（最大值）

±30V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-

产品类别

MOSFET