STMicroelectronics STH200N10WF7-2

安装类型

表面贴装

包装/外壳

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

引脚数

3

供应商器件包装

H2Pak-2

厂商

STMicroelectronics

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

180A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4.5V @ 250μA

Power Dissipation (Max)

340W (Tc)

Continuous Drain Current Id

180

Package Type

H2PAK-2

Channel Mode

Enhancement

MSL

MSL 1 - Unlimited

Qualification

-

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

340 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.048678 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

SMD/SMT

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

Qg - Gate Charge

93 nC

Rds On - Drain-Source Resistance

4 mOhms

RoHS

Details

Id - Continuous Drain Current

180 A

系列

-

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

子类别

MOSFETs

通道数量

1 Channel

功率耗散

340

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

4mOhm @ 90A, 10V

输入电容(Ciss)(Max)@Vds

4430 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

93 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品

MOSFET

产品类别

MOSFET