STMicroelectronics STHU32N65DM6AG

安装类型

表面贴装

包装/外壳

TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

供应商器件包装

HU3PAK

厂商

STMicroelectronics

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

37A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

320W (Tc)

Qualification

AEC-Q101

Continuous Drain Current Id

37A

Package Type

HU3PAK

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

4.75 V

Pd - Power Dissipation

320 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 25 V, + 25 V

Unit Weight

0.081836 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

600

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

Qg - Gate Charge

52.6 nC

Rds On - Drain-Source Resistance

97 mOhms

RoHS

Details

Id - Continuous Drain Current

37 A

系列

Automotive, AEC-Q101

操作温度

-55°C ~ 150°C (TJ)

包装

切割胶带

子类别

MOSFETs

通道数量

1 Channel

功率耗散

320W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

97mOhm @ 18.5A, 10V

不同 Id 时 Vgs(th)（最大值）

4.75V @ 250μA

输入电容(Ciss)(Max)@Vds

2211 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

52.6 nC @ 10 V

漏源电压 (Vdss)

650 V

Vgs（最大值）

±25V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品

MOSFET

产品类别

MOSFET