STMicroelectronics STL19N3LLH6AG

包装/外壳

PowerFLAT-8

安装类型

表面贴装

供应商器件包装

PowerFlat™ (5x6)

RoHS

Details

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

30 V

Id - Continuous Drain Current

10 A

Rds On - Drain-Source Resistance

33 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Qg - Gate Charge

3.7 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

50 W

Channel Mode

Enhancement

Qualification

AEC-Q100

Fall Time

2.5 ns

Factory Pack QuantityFactory Pack Quantity

3000

Typical Turn-Off Delay Time

12.8 ns

Typical Turn-On Delay Time

2.4 ns

Package

Bulk

Base Product Number

STL19

Current - Continuous Drain (Id) @ 25℃

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

STMicroelectronics

Power Dissipation (Max)

50W (Tc)

Product Status

活跃

包装

Reel

系列

STL19N3LLH6AG

操作温度

-55°C ~ 175°C (TJ)

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

33mOhm @ 5A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 250µA

输入电容(Ciss)(Max)@Vds

321 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

3.7 nC @ 4.5 V

上升时间

2.5 ns

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

晶体管类型

1 N-Channel

场效应管特性

-