STMicroelectronics STL52N60DM6

包装/外壳

8-PowerVDFN

安装类型

表面贴装

厂商

STMicroelectronics

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

45A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4.75V @ 250μA

Power Dissipation (Max)

174W (Tc)

Continuous Drain Current Id

45

MSL

MSL 3 - 168 hours

Qualification

-

Vds - Drain-Source Breakdown Voltage

600 V

Moisture Sensitive

有

Typical Turn-On Delay Time

19.4 ns

Vgs th - Gate-Source Threshold Voltage

4.75 V

Pd - Power Dissipation

174 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 25 V, + 25 V

Unit Weight

0.006349 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

Qg - Gate Charge

52 nC

Tradename

MDmesh

Rds On - Drain-Source Resistance

84 mOhms

RoHS

Details

Typical Turn-Off Delay Time

63 ns

Id - Continuous Drain Current

45 A

操作温度

-55°C ~ 150°C (TJ)

包装

MouseReel

子类别

MOSFETs

通道数量

1 Channel

功率耗散

174

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

84mOhm @ 22.5A, 10V

输入电容(Ciss)(Max)@Vds

2468 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

52 nC @ 10 V

上升时间

4.3 ns

漏源电压 (Vdss)

600 V

Vgs（最大值）

±25V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-

产品类别

MOSFET