STMicroelectronics STO65N60DM6

安装类型

表面贴装

包装/外壳

8-PowerSFN

供应商器件包装

TOLL (HV)

厂商

STMicroelectronics

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

46A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

320W (Tc)

Continuous Drain Current Id

46

MSL

MSL 1 - Unlimited

Qualification

-

Number of Elements per Chip

1

Package Type

TO-LL Type A2

Channel Mode

Enhancement

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

20 ns

Vgs th - Gate-Source Threshold Voltage

4.75 V

Pd - Power Dissipation

320 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 25 V, + 25 V

Unit Weight

0.024586 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1800

Mounting Styles

SMD/SMT

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

Qg - Gate Charge

65.2 nC

Tradename

MDmesh

Rds On - Drain-Source Resistance

76 mOhms

RoHS

Details

Typical Turn-Off Delay Time

55 ns

Id - Continuous Drain Current

46 A

操作温度

-55°C ~ 150°C (TJ)

包装

MouseReel

子类别

MOSFETs

引脚数量

8

配置

Single

通道数量

1 Channel

功率耗散

320

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

76mOhm @ 23A, 10V

不同 Id 时 Vgs(th)（最大值）

4.75V @ 250μA

输入电容(Ciss)(Max)@Vds

2500 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

65.2 nC @ 10 V

上升时间

10 ns

漏源电压 (Vdss)

600 V

Vgs（最大值）

±25V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-

产品类别

MOSFET