STMicroelectronics STP150N10F7AG

安装类型

通孔

包装/外壳

TO-220-3

引脚数

3

供应商器件包装

TO-220

厂商

STMicroelectronics

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

110A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4.5V @ 250μA

Power Dissipation (Max)

250W (Tc)

Package Type

TO-220

MSL

MSL 1 - Unlimited

Qualification

AEC-Q101

Continuous Drain Current Id

110A

Vds - Drain-Source Breakdown Voltage

100 V

Typical Turn-On Delay Time

33 ns

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

250 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.067021 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

Qg - Gate Charge

117 nC

Rds On - Drain-Source Resistance

4.2 mOhms

RoHS

Details

Typical Turn-Off Delay Time

72 ns

Id - Continuous Drain Current

110 A

系列

-

操作温度

-55°C ~ 175°C (TJ)

包装

Tube

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

250W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

4.2mOhm @ 55A, 10V

输入电容(Ciss)(Max)@Vds

9000 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

127 nC @ 10 V

上升时间

57 ns

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET