STMicroelectronics STP50N60DM6

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

TO-220

厂商

STMicroelectronics

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

250W (Tc)

Base Product Number

STP50

Continuous Drain Current Id

36

Qualification

-

Number of Elements per Chip

1

Package Type

TO-LL-HV

Channel Mode

Enhancement

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

4.75 V

Pd - Power Dissipation

250 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 25 V, + 25 V

Unit Weight

0.067021 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

通孔

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

Qg - Gate Charge

55 nC

Tradename

MDmesh

Rds On - Drain-Source Resistance

80 mOhms

RoHS

Details

Id - Continuous Drain Current

36 A

操作温度

-55°C ~ 150°C (TJ)

包装

Tube

子类别

MOSFETs

引脚数量

8

通道数量

1 Channel

功率耗散

250

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

80mOhm @ 18A, 10V

不同 Id 时 Vgs(th)（最大值）

4.75V @ 250μA

输入电容(Ciss)(Max)@Vds

2350 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

55 nC @ 10 V

漏源电压 (Vdss)

600 V

Vgs（最大值）

±25V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET